PHP27NQ11T 查看數據表（PDF） - Philips Electronics
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PHP27NQ11T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHP27NQ11T
N-channel TrenchMOS™ standard level FET
30
VGS = 0 V
IS
(A)
20
03ao65
15
VGS
(V)
ID = 27 A
Tj = 25 °C
10
VDD = 20 V
03ao67
80 V
10
5
175 °C
Tj = 25 °C
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
10
20
30
40
50
QG (nC)
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 27 A; VDD = 20 V and 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 13183
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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