PHP2N60 查看數據表（PDF） - Philips Electronics
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PHP2N60 Datasheet PDF : 7 Pages
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Philips Semiconductors
Product specification
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PowerMOS transistor
PHP2N60
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5 ID, Drain current (Amps)
VDS = 30 V
4
PHP2N60
Tj = 25 C
3
Tj = 150 C
2
1
0
0
2
4
6
8
10
VGS, Gate-Source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
gfs, Transconductance (S)
3
VDS = 30 V
2.5
PHP2N60
2
1.5
150 C
Tj = 25 C
1
0.5
0
0
1
2
3
4
5
ID, Drain current (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
a
Normalised RDS(ON) = f(Tj)
2
1
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1E-06
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
1000 Junction capacitances (pF)
100
10
PHP2N60
Ciss
Coss
Crss
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2 A; VGS = 10 V
1
1
10
100
VDS, Drain-Source voltage (Volts)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
April 1997
4
Rev 1.001
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