PHP2N60 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
比赛名单
PHP2N60 Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
Product specification
--------------------------------------------------------------------------------------------------------------
PowerMOS transistor
PHP2N60
----------------------------------------------------------------------------------------------------------------------------------------------------------
15 VGS, Gate-Source voltage (Volts)
ID = 2.0 A
Tj = 25 C
240 V
120 V
10
PHP2N60
VDD = 360 V
5
0
0
10
20
30
40
Qg, Gate charge (nC)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
1000 Switching times (ns)
VDD = 300 V
VGS = 10 V
RD = 150 Ohms
ID = 2 A
Tj = 25 C
100
td(off)
tf
tr
10
td(on)
PHP2N60
1
0
10
20
30
40
50
60
RG, Gate resistance (Ohms)
Fig.14. Typical switching times.
td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50
0
50
100
150
Tj, Junction temperature (C)
Fig.15. Normalised drain-source breakdown voltage.
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
20 IF, Source-Drain diode current (Amps)
VGS = 0 V
15
PHP2N60
10
150 C
Tj = 25 C
5
0
0
0.5
1
1.5
VSDS, Source-Drain voltage (Volts)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
EAS, Normalised unclamped inductive energy (%)
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Starting Tj ( C)
Fig.17. Normalised unclamped inductive energy.
EAS% = f(Tj)
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.18. Unclamped inductive test circuit.
EAS = 0.5 ⋅ LID2 ⋅ V(BR)DSS/(V(BR)DSS − VDD)
April 1997
5
Rev 1.001
Share Link: 