UT61L5128MC-10(2002) 查看數據表（PDF） - Utron Technology Inc

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UT61L5128MC-10
(Rev.:2002)

512K X 8 BIT HIGH SPEED CMOS SRAM

Utron Technology Inc 



UTRON

Preliminary Rev. 1.1

UT61L5128

512K X 8 BIT HIGH SPEED CMOS SRAM

REVISION HISTORY

REVISION

Preliminary Rev. 0.1

Preliminary Rev.1.0

Preliminary Rev.1.1

DESCRIPTION

Original.

1.Add test condition for ISB.

2.Add note to Vcc for access time=10ns.

1.Revised access time : 10/12/15 ns

8ns (max.) for Vcc=3.15V~3.6V

10ns (max.) for Vcc=3.0V~3.6V

2.Add CMOS low power operating :

Operating current : 260/220mA (Icc max.)

Standby current : 10/2mA(max.)

3.Add Data retention characteristics

4.Revised Terminal Voltage with Respect to Vss(VTERM) :

-0.5 to VCC+0.5 -0.5 to 4.6

5.Revised Input high voltage (VIH):

2.2(min)/Vcc+0.5(max) 2.0(min)/Vcc+0.3(max)

Released Date

Jun 5, 2001

Jun 23,2001

Sep 06,2002

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80061

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