STP80NS04ZB 查看數據表（PDF） - STMicroelectronics
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STP80NS04ZB
STMicroelectronics
STP80NS04ZB Datasheet PDF : 6 Pages
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STP80NS04ZB
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.75
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
Max Value
80
500
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Clamped Voltage
ID = 1 mA, VGS = 0
33
V
-40 < TJ < 175 oC
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 16 V
VDS = 16 V
VDS = 16 V
Tc=25 oC
TJ =150 oC
TJ =175 oC
10
µA
50
µA
100
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 10 V
VGS = ± 16 V
TJ =175 oC
TJ =175 oC
50
µA
150
µA
VGSS
Gate-Source
IGS = 100 µA
18
V
Breakdown Voltage
ON (*)
Symbol
VGS(th)
Parameter
Gate Threshold Voltage
RDS(on)
ID(on)
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS
ID = 1 mA
-40 < TJ < 150 oC
VGS = 10 V
VGS = 16 V
ID = 40 A
ID = 40 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1.7
80
Typ.
3
8
7.5
Max.
4.2
9
8
Unit
V
mΩ
mΩ
A
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS>ID(on)xRDS(on)max ID=40A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
30
Typ.
50
2700
1275
285
Max.
3300
1600
350
Unit
S
pF
pF
pF
2/6
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