STP80NS04ZB 查看數據表（PDF） - STMicroelectronics
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STP80NS04ZB
STMicroelectronics
STP80NS04ZB Datasheet PDF : 6 Pages
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STP80NS04ZB
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 20 V ID= 80 A VGS= 10V
80
105
nC
20
nC
27
nC
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Vclamp = 30 V
ID = 80 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
Min.
Typ.
115
80
210
Max.
150
105
280
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 80 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 80 A
di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
90
0.18
4
Max.
80
320
1.5
Unit
A
A
V
ns
µC
A
3/6
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