STP8NM50 查看數據表（PDF） - STMicroelectronics

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STP8NM50

N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP8NM50 - STP8NM50FP

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

500

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30 V

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250 µA

3

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 2.5A

1

µA

10 µA

±100 nA

4

5

V

0.7 0.8 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID= 2.5A

2.4

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

415

88

12

pF

pF

pF

Coss

(2)

eq.

Equivalent ouput

capacitance

VGS=0, VDS =0V to 400V

50

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=400V, ID = 5A

VGS =10V

(see Figure 16)

13

nC

4

nC

6

nC

f=1MHz Gate DC Bias = 0

RG Gate input resistance

Test signal level = 20mV

3

Ω

Open drain

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

4/14

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