STP8NM50 查看數據表（PDF） - STMicroelectronics

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STP8NM50

N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET

STMicroelectronics 

STP8NM50 - STP8NM50FP

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

tr(Voff)

tf

tc

Off-voltage rise time

Fall time

Cross-over time

Test conditions

VDD=250 V, ID=2.5A,

RG=4.7Ω, VGS=10V

(see Figure 15)

VDD=400 V, ID=5A,

RG=4.7Ω, VGS=10V

(see Figure 15)

Min Typ Max Unit

16

ns

8

ns

14

ns

6

ns

13

ns

Table 7. Source drain diode

Symbol

Parameter

ISD

ISDM

VSD

trr

Qrr

IRRM

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Test conditions

ISD=10A, VGS=0

ISD=5A, di/dt = 100A/µs,

VDD=100 V, Tj=25°C

(see Figure 20)

ISD=5A, di/dt = 100A/µs,

VDD=100 V, Tj=150°C

(see Figure 20)

Min Typ Max Unit

8A

32 A

1.5 V

185

ns

1.1

µC

11.5

A

270

ns

1.6

µC

12

A

5/14

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