TB6674PG/FG/FAG
Electrical Characteristics (Unless otherwise specified, Ta = 25°C, VCC = 5 V, VS1 = 12 V,
and VS2A = 5 V)
Characteristic
Supply current
Input voltage
High
Low
Symbol
ICC1
ICC2
ICC3
VIN H
VIN L
Test
Cir−
cuit
Test Condition
PS: H, VS2B: H
1 PS: L, VS2B: H
VS2B: L
―
INA, INB, PS, Vs2B
Min Typ. Max Unit
―
3
―
3
―
1
2.0
―
-0.2 ―
5
mA
5
20
μA
Vcc
V
0.8
Input hysteresis voltage*
VINhys
1
⎯
90
⎯
mV
Input current
IIN (H)
IIN (L)
INA, INB, PS, Vs2B
1
VIN = 5.0 V
Built in pull-down resistance.
VIN = 0 V
5
20
38
μA
⎯
⎯
1
μA
Output ON
resistance
(Note)
TB6674PG
TB6674FG
Ron 1H
Ron 2H
Ron L
Ron 1H
2 PS: L, VS2B: H
3 PS: H, VS2B: H
2 VS2B: H
2 PS: L, VS2B: H
IOUT = 400 mA ―
2
5
IOUT = 100 mA ―
7
16
IOUT = 400 mA ―
0.9
3.5
Ω
IOUT = 200 mA ―
2
5
TB6674FAG Ron 2H
3 PS: H, VS2B: H
IOUT = 50 mA
―
7
16
Ron L
2 VS2B: H
IOUT = 200 mA ―
0.9
3.5
Diode forward voltage
VF U
VF L
4 IF = 350 mA, PS = L
―
1.2
2.5
V
―
1.0
2.2
Delay time
tpLH
tpHL
― IN − φ
―
0.5
―
μs
―
0.5
―
Thermal shutdown circuit*
TSD
― (Design target only)
―
160
―
°C
TSD hysteresis *
TSDhys
― (Design target only)
―
20
―
°C
* : Toshiba does not implement testing before shipping.
5
Ver.3 2010-07-07