TGA4506 查看數據表（PDF） - TriQuint Semiconductor

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TGA4506

K Band Low Noise Amplifier

TriQuint Semiconductor 

TGA4506

TABLE IV

THERMAL INFORMATION

PARAMETER

TEST CONDITIONS

TCH

(°C)

θJC Thermal Resistance

(channel to Case)

Vd = 3.5 V

Id = 60 mA

Pdiss = 0.21 W

98

θJC

(°C/W)

Tm

(HRS)

133

7.2E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier

at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC

power is dissipated.

Median Lifetime (Tm) vs. Channel Temperature

4

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