TGA4521 查看數據表（PDF） - TriQuint Semiconductor
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TGA4521 Datasheet PDF : 9 Pages
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TGA4521
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
⏐Ig⏐
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
6.5 V
-2 TO 0 V
350 mA
9 mA
20 dBm
See note 4/
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD
3/ Total current for the entire MMIC.
4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 0C – TBASE 0C) / 70 (0C/W)
Where TBASE is the base plate temperature.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
2
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June 2008 © Rev
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