BAX12 查看數據表（PDF） - Philips Electronics
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BAX12 Datasheet PDF : 8 Pages
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Philips Semiconductors
Controlled avalanche diode
Product specification
BAX12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
V(BR)R
Cd
trr
reverse avalanche breakdown voltage
diode capacitance
reverse recovery time
CONDITIONS
see Fig.3
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 400 mA
see Fig.5
VR = 90 V
VR = 90 V; Tj = 150 °C
IR = 1 mA
f = 1 MHz; VR = 0;
see Fig.6
when switched from
IF = 30 mA to IR = 30 mA;
RL = 100 Ω; measured at
IR = 3 mA; see Fig.10
MIN.
−
−
−
−
−
−
−
120
−
−
MAX. UNIT
750 mV
840 mV
900 mV
1.0 V
1.25 V
100 nA
100 µA
170 V
35 pF
50 ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
VALUE
240
375
UNIT
K/W
K/W
1996 Sep 17
3
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