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BAX12 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
比赛名单
BAX12
Philips
Philips Electronics Philips
BAX12 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
Controlled avalanche diode
Product specification
BAX12
handbook6,0h0alfpage
IR
(mA)
400
(1)
(2)
200
MBG698
(3) (4)
0
100
150
VR (V)
200
handbook, halfpage
VR
MBG699
time
IR
t (rectangular waveform)
time
t
(triangular
waveform)
δ
=
t
T
T
Reverse voltages higher than the VR ratings are allowed, provided:
a. The transient energy 7.5 mJ at PRRM 30 W; Tj = 25 °C;
the transient energy 5 mJ at PRRM = 120 W; Tj = 25 °C (see Fig.7).
b. T 50 ms; δ ≤0.01 (rectangular waveform) (see Fig.9).
δ ≤0.02 (triangular waveform) (see Fig.9).
With increasing temperature, the maximum permissible transient
energy must be decreased by 0.03 mJ/K.
(1) Tj = 25 °C; minimum values.
(2) Tj = 175 °C; minimum values.
(3) Tj = 25 °C; maximum values.
(4) Tj = 175 °C; maximum values.
Fig.8 Reverse current as a function of continuous
reverse voltage.
Fig.9 Peak reverse voltage and current test
pulses.
1996 Sep 17
6

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