D16805 查看數據表（PDF） - NEC => Renesas Technology
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D16805 Datasheet PDF : 12 Pages
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µPD16805
ELECTRICAL SPECIFICATIONS (Unless otherwise specified, TA = 25 °C, VDD = recommended
operating condition, VM = 0.5 to 7.5 V)
Parameter
VDD pin current
VM pin current
H bridge ON resistanceNote
Control pin high-level input voltage
Control pin low-level input voltage
Charge pump circuit turn-ON time
H bridge output circuit turn-ON time
H bridge output circuit turn-OFF time
Control pin input pull-down resistor
Symbol
IDD1
IDD2
IM1
IM2
RON
VIH
VIL
tONG
tONH
tOFFH
RIND
Conditions
Ratings
Unit
MIN. TYP. MAX.
VDD = 5 V, TA = recommended
conditions
Control pins at high level
0.6
2.0
mA
VDD = 5 V, TA = recommended
conditions
Control pins at low level
0.3
10
µA
Control pins at low level,
TA = recommended conditions
0.1
10
µA
Control pins at low level
1.0
µA
IDR = 1.0 A, VDD = VM = 5 V
0.4
0.6
Ω
TA = recommended condition VDD × 0.6
V
TA = recommended condition
VDD × 0.2
V
VDD = VM = 5 V,
TA = recommended conditions
C1 = C2 = C3 = 10 nF
IDR = 1.0 A
0.5
1.0
ms
10
µs
5.0
µs
35
50
65
kΩ
TA = recommended condition
25
75
kΩ
Note Sum of ON resistances of top and bottom MOS FETs
3
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