D16805 查看數據表（PDF） - NEC => Renesas Technology

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比赛名单

D16805

MONOLITHIC H BRIDGE DRIVER CIRCUIT

NEC => Renesas Technology 

DC-DC

convertor

Battery

CPU

VDD = 3.0 V to 7.5 V

VM = 0.5 V to 7.5 V

VG = 11 V to 14 V

STBY 14

INC 8

IN1 6

IN2 7

Pull-down resistor

50 kΩ TYP.

VDD

5

OSC

circuit

23

16 1

15

Charge pump circuit

VM

10

Control circuit

Level shift

circuit

D MOS FET

H bridge

circuit

9

DGND

12

PGND

VM

C4 Note

1 to 10 µ F

11 OUT1

13

OUT2

M

Film

take-up motor

L

IN1

IN2 L

H

H

Forward Brake

mode

mode

Reverse

mode

Stop mode

Note It is recommended to connect a capacitor of 1 to 10

µF between VM and GND to protect the gate of the

DMOS FET from surge voltage.

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