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V54C365164VDL 查看數據表(PDF) - Mosel Vitelic Corporation

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V54C365164VDL Datasheet PDF : 56 Pages
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MOSEL VITELIC
Address Input for Mode Set (Mode Register Operation)
V54C365164VD(L)
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus (Ax)
Operation Mode
CAS Latency BT Burst Length Mode Register
Operation Mode
BA1 BA0 A11 A10 A9 A8 A7
Mode
0
0
0
0 000
Burst Read/Burst
Write
0
0
0
0
100
Burst Read/Single
Write
CAS Latency
A6 A5 A4
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Latency
Reserve
1
2
3
Reserve
Reserve
Reserve
Reserve
Burst Type
A3
Type
0
Sequential
1
Interleave
Burst Length
Length
A2 A1 A0
Sequential Interleave
000
1
1
001
2
2
010
4
4
011
8
8
1 0 0 Reserve Reserve
1 0 1 Reserve Reserve
1 1 0 Reserve Reserve
1 1 1 Full Page Reserve
Similar to the page mode of conventional
DRAMs, burst read or write accesses on any col-
umn address are possible once the RAS cycle latch-
es the sense amplifiers. The maximum tRAS or the
refresh interval time limits the number of random col-
umn accesses. A new burst access can be done
even before the previous burst ends. The interrupt
operation at every clock cycles is supported. When
the previous burst is interrupted, the remaining ad-
dresses are overridden by the new address with the
full burst length. An interrupt which accompanies
with an operation change from a read to a write is
possible by exploiting DQM to avoid bus contention.
When two or more banks are activated
sequentially, interleaved bank read or write
operations are possible. With the programmed burst
length, alternate access and precharge operations
on two or more banks can realize fast serial data
access modes among many different pages. Once
two or more banks are activated, column to column
interleave operation can be done between different
pages.
V54C365164VD(L) Rev. 1.3 September 2001
9

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