W24LH8 查看數據表（PDF） - Winbond

零件编号

产品描述 (功能)

比赛名单

W24LH8

32K x 8 CMOS STATIC RAM

Winbond 

W24LH8

VERSION HISTORY

VERSION

A1

A2

DATE

Nov. 1998

Jan. 1999

A3

Mar. 2001

PAGE

DESCRIPTION

-

Initial Issued

1

Change low power consumption active: from 108 to 156 mW

(max.)

3

Change operating power supply current (IDD) from 30 to 40 mA

(max.)

1

Change operating power supply voltage from (2.7V to 3.6V) to

(2.7V to 5.5V), access time from 70 nS to (55 nS (5V ±10%),

100 nS (3V ±10%)), and remove 28-pin 600 mil DIP package.

3

Change operating power supply current (IDD) from 40 mA to

(70 mA/5V, 40 mA/3V)(max.)

4

Add 55 nS (5V ±10%) spec. and change 3V ±10% spec. from

70 nS to 100 nS.

2, 4, 7, 8 Delete SL grade

8

Correct Ordering Information

Headquarters

Winbond Electronics (H.K.) Ltd.

No. 4, Creation Rd. III,

Science-Based Industrial Park,

Hsinchu, Taiwan

TEL: 886-3-5770066

FAX: 886 -3-5792766

Unit 9-15, 22F, Millennium City,

No. 378 Kwun Tong Rd;

Kowloon, Hong Kong

TEL: 852 -27513100

FAX: 852 -27552064

http://www.winbond.com.tw/

Voice & Fax-on-demand: 886 -2-27197006

Taipei Office

11F, No. 115, Sec. 3, Min -Sheng East Rd.,

Taipei, Taiwan

TEL: 886-2-27190505

FAX: 886 -2-27197502

Note: All data and specifications are subject to change withou t notice.

Winbond Electronics North America Corp.

Winbond Memory Lab.

Winbond Microelectronics Corp.

Winbond Systems Lab.

2727 N. First Street, San Jose,

CA 95134, U.S.A.

TEL: 408-9436666

FAX: 408-5441798

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