W24LH8 查看數據表（PDF） - Winbond

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W24LH8

32K x 8 CMOS STATIC RAM

Winbond 

W24LH8

TRUTH TABLE

#CS #OE #WE

H

X

X

L

H

H

L

L

H

L

X

L

MODE

Not Selected

Output Disable

Read

Write

I/O1−I/O8

High Z

High Z

Data Out

Data In

VDD CURRENT

ISB, ISB1

IDD

IDD

IDD

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER

Supply Voltage to VSS Potential

Input/Output to VSS Potential

Allowable Power Dissipation

Storage Temperature

Operating Temperature

LE

LI

RATING

-0.5 to +7.0

-0.5 to VDD +0.5

1.0

-65 to +150

-20 to 85

-40 to 85

UNIT

V

V

W

°C

°C

°C

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability

of the device.

Operating Characteristics

(VSS = 0V; TA (°C) = -20 to 85 for LE; -40 to 85 for LI)

PARAMETER

SYM. TEST CONDITIONS

Input Low Voltage

VIL

-

Input High Voltage

VIH

-

Input Leakage Current

ILI VIN = VSS to VDD

Output Leakage Current

ILO VI/O = VSS to VDD,

#CS = VIH (min.) or

#OE = VIH (min.) or

#WE = VIL (max.)

Output Low Voltage

VOL IOL = +2.1 mA

Output High Voltage

VOH IOH = -1.0 mA

MIN.

-0.5

+2.0

-1

-1

MAX.

+0.6

VDD +0.5

+1

+1

UNIT

V

V

µA

µA

-

0.4

V

2.2

-

V

-2-

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