STL24N60M2(2014) 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
比赛名单
STL24N60M2
(Rev.:2014)
(Rev.:2014)
STMicroelectronics
STL24N60M2 Datasheet PDF : 16 Pages
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STL24N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12 VDS
10
VDD=480 V
ID=18 A
AM15471v1
VDS
(V)
600
500
Figure 9. Capacitance variations
C
(pF)
AM15665v1
1000
Ciss
8
400
6
300
4
200
2
100
0
0
0 5 10 15 20 25 30 Qg(nC)
100
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.1
ID = 250 µA
AM15473v1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
2.3
2.1
1.9
ID=9 A
VGS=10 V
AM15667v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Output capacitance stored energy
VSD ( V )
AM15668v1
Eoss(µJ)
AM15669v1
1.4
8
1.2
7
TJ=-50°C
6
1
5
0.8
TJ=150°C
4
0.6
TJ=25°C
3
0.4
2
0.2
1
0
0 2 4 6 8 10 12 14 16 18 ISD(A)
0
0 100 200 300 400 500 600 VDS(V)
DocID024777 Rev 2
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