VND670SP(2003) 查看數據表（PDF） - STMicroelectronics

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VND670SP
(Rev.:2003)

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER (BRIDGE CONFIGURATION)

STMicroelectronics 

VND670SP

ELECTRICAL TRANSIENT REQUIREMENTS

ISO T/R

7637/1

Test Pulse

1

2

3a

3b

4

5

Test Level

I

-25V

+25V

-25V

+25V

-4V

+26.5V

Test Level

II

-50V

+50V

-50V

+50V

-5V

+46.5V

Test Level

III

-75V

+75V

-100V

+75V

-6V

+66.5V

Test Level

IV

-100V

+100V

-150V

+100V

-7V

+86.5V

Test Levels

Delays and Impedance

2ms, 10Ω

0.2ms, 10Ω

0.1µs, 50Ω

0.1µs, 50Ω

100ms, 0.01Ω

400ms, 2Ω

ISO T/R

7637/1

Test Pulse

1

2

3a

3b

4

5

Test Levels Result

I

C

C

C

C

C

C

Test Levels Result

II

C

C

C

C

C

E

Test Levels Result

III

C

C

C

C

C

E

Test Levels Result

IV

C

C

C

C

C

E

Class

C

E

Contents

All functions of the device are performed as designed after exposure to disturbance.

One or more functions of the device are not performed as designed after exposure to disturbance

and cannot be returned to proper operation without replacing the device.

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