HI-200 查看數據表（PDF） - Intersil

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HI-200

Dual/Quad SPST, CMOS Analog Switches

Intersil 

Die Characteristics

METALLIZATION:

Type: CuAl

Thickness: 16kÅ ±2kÅ

Metallization Mask Layout

OUT 1

A1

21

IN 1

3

V-

4

GND

5

IN 4

6

OUT 4

78

A4

HI-200, HI-201

PASSIVATION:

Type: Nitride over Silox

Nitride Thickness: 3.5kÅ ±1kÅ

Silox Thickness: 12kÅ ±2kÅ

WORST CASE CURRENT DENSITY:

2 x 105 A/cm2 at 25mA

HI-201

A2

16 15

OUT 2

14

IN 2

13

V+

12

VREF

11

IN 3

9 10

OUT 3

A3

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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

10

FN3121.8

April 6, 2005

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