HI-200 查看數據表（PDF） - Intersil
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HI-200 Datasheet PDF : 10 Pages
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HI-200, HI-201
Electrical Specifications
PARAMETER
Supplies = +15V, -15V; VREF = Open; VAH (Logic Level High) = 2.4V, VAL (Logic Level Low) = 0.8V (Continued)
TEST
CONDITIONS
-2
-4, -5, -9
TEMP
(oC)
MIN TYP MAX MIN TYP MAX UNITS
OFF Input Leakage Current, IS(OFF)
HI-200
(Note 6)
25
-
1
5
-
1
50
nA
Full
-
100
500
-
10
500
nA
HI-201
25
-
2
5
-
2
50
nA
Full
-
-
500
-
-
250
nA
OFF Output Leakage Current, ID(OFF)
HI-200
(Note 6)
25
-
1
5
-
1
50
nA
Full
-
100
500
-
10
500
nA
HI-201
25
-
2
5
-
2
50
nA
Full
-
35
500
-
35
250
nA
ON Leakage Current, ID(ON)
HI-200
(Note 6)
25
-
1
5
-
1
50
nA
Full
-
100
500
-
10
500
nA
HI-201
25
-
2
5
-
2
50
nA
Full
-
-
500
-
-
250
nA
POWER SUPPLY CHARACTERISTICS (Note 5)
Power Dissipation, PD
25
-
15
-
-
15
-
mW
Full
-
-
60
-
-
60
mW
Current, I+
25
-
0.5
-
-
0.5
-
mA
Full
-
-
2.0
-
-
2.0
mA
Current, I-
25
-
0.5
-
-
0.5
-
mA
Full
-
-
2.0
-
-
2.0
mA
NOTES:
2. VOUT = ±10V, IOUT = 1mA.
3. Digital Inputs are MOS gates: typical leakage is < 1nA.
4. VA = 5V, RL = 1kΩ, CL = 10pF, VS = 3VRMS, f = 100kHz.
5. VA = +3V or VA = 0V for Both Switches.
6. Refer to Leakage Current Measurements (Figure 2).
Test Circuits and Waveforms TA = 25oC, VSUPPLY = ±±15V, VAH = 2.4V, VAL = 0.8V and VREF = Open
1mA
rON
=
----V---2-----
1mA
IN
±VIN
V2
OUT
FIGURE 1A. ON RESISTANCE TEST CIRCUIT
5
FN3121.8
April 6, 2005
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