ADG801BRT 查看數據表（PDF） - Analog Devices
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ADG801BRT Datasheet PDF : 9 Pages
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PRELIMINARY TECHNICAL DATA
ADG801/ADG802–SPECIFICATIONS1
(VDD = 5 V ±10%, VSS = GND = 0 V. All specifications –40°C to +125°C unless otherwise noted.)
–40oC to –40oC to
Parameter
+25oC
+85oC +125oC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
0.25
0.4
On-Resistance Flatness (RFLAT(ON)) 0.05
0 V to VDD V
Ω typ VS = 0 V to VDD, IS = –10 mA;
0.5
0.75
Ω max Test Circuit 1
Ω typ VS = 0 V to VDD, IS = –10 mA
0.1
0.2
Ω max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF) ±0.01
±0.5
±1
tbd
Drain OFF Leakage ID (OFF) ±0.01
±0.5
±1
tbd
Channel ON Leakage ID, IS (ON) ±0.01
±0.5
±1
tbd
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = +5.5 V
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = VD = 1 V, or 4.5 V;
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
5
30
TBD
2.4
0.8
±0.1
TBD
V min
V max
µA typ VIN = VINL or VINH
µA max
pF typ
ns typ RL = 50 Ω, CL = 35 pF
ns max VS = 3 V; Test Circuit 4
tOFF
Charge Injection
Off Isolation
Bandwidth –3 dB
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
20
TBD
±20
–65
30
55
55
110
0.001
TBD
1.0
ns typ
ns max
pC typ
RL = 50 Ω, CL = 35 pF
VS = 3 V; Test Circuit 4
VS = 0 V, RS = 0 Ω, CL = 1 nF, Test
Circuit 5
dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz,
Test Circuit 6
MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 7
pF typ f = 1 MHz
pF typ f = 1 MHz
pF typ f = 1 MHz
VDD = +5.5 V
µA typ Digital Inputs = 0 V or 5.5 V
µA max
NOTES
1Temperature ranges are as follows: Extended Temperature Range: – 40°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. PrE
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