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AMMC-5024(2007) 查看數據表(PDF) - Avago Technologies

零件编号
产品描述 (功能)
比赛名单
AMMC-5024
(Rev.:2007)
AVAGO
Avago Technologies AVAGO
AMMC-5024 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
AMMC-5024 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Idss
Vp
Vg2
Idsmin
(Vg1)
Idsmin
(Vg2)
θch-b
Saturated Drain Current (Vdd=7 V, Vg1=0 V, Vg2=open circuit)
First Gate Pinch-off Voltage (Vdd=7 V, Idd=30 mA, Vg2=open circuit)
Second Gate Self-bias Voltage (Vdd=7 V, Idd = 200 mA, Vg2=open circuit)
First Gate Minimum Drain Current
(Vdd =7 V, Vg1=-7 V, Vg2=open circuit)
Second Gate Minimum Drain Current
(Vdd=7 V, Vg1=0 V, Vg2= -3.5 V)
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
Units
mA
V
V
mA
mA
°C/W
Min. Typ. Max.
265
350
385
-8.2
2.75
47
105
52
RF Specifications for High Power Applications[2, 3] (Vdd=7 V, Idd(Q)=200 mA, Zin= Zo=50Ω
Symbol
Parameters and Test Conditions
Units
Min.
|S21|2
|S21|2
Small-signal Gain
Small-signal Gain Flatness
dB
14
dB
RLin
Input Return Loss
dB
12
RLout
|S12|2
Output Return Loss
Isolation
dB
10
dB
26
P-1dB
Output Power @ 1 dB Gain Compression f = 22 GHz
dBm
21
Psat
Saturated Output Power
f = 22 GHz
dBm
23
OIP3
Output 3rd Order Intercept Point,
Rfin1 = Rfin2 = 2 dBm, f = 22 GHz, f = 2 MHz
dBm
27
NF
Noise Figure (Vds = 3V, Ids = 140 mA)
f = 26 GHz
dB
f = 40 GHz
dB
Typ.
Max.
16
18
±0.75
±2
16.9
16.8
28
22.5
24.5
30
4.6
6.5
7.2
9
RF Specifications for High Gain and Low Power Applications[2, 3] (Vdd=4 V, Idd(Q)=160 mA, Zin= Zo=50Ω
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21|2
|S21|2
Small-signal Gain
Small-signal Gain Flatness
dB
17.5
dB
±1.5
RLin
Minimum Input Return Loss
dB
13
RLout
|S12|2
Minimum Output Return Loss
Isolation
dB
13
dB
30
P-1dB
Output Power @ 1 dB Gain Compression f = 22 GHz
dBm
17.3
Psat
Saturated Output Power
f = 22 GHz
dBm
20.5
OIP3
Output 3rd Order Intercept Point,
dBm
22.5
Rfin1 = Rfin2 = 2 dBm, f = 22 GHz, f = 2 MHz
NF
Noise Figure
f = 26 GHz
dB
3.7
f = 40 GHz
dB
5.5
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted.
2. Data measured in wafer form, Tchuck = 25°C
3. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.


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