AP501 查看數據表（PDF） - WJ Communications => Triquint
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AP501 Datasheet PDF : 5 Pages
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AP501
PCS-band 4W HBT Amplifier Module
The Communications Edge TM
Product Information
Product Features
Product Description
Functional Diagram
• 1930 – 1990 MHz
• 32.5 dB Gain
• +36 dBm P1dB
• -62 dBc ACPR
@ 27 dBm IS-95A linear power
• -55 dBc ACLR
@ 26.5 dBm wCDMA linear power
• +12 V Single Supply
• Power Down Mode
• Bias Current Adjustable
• RoHS-compliant flange-mount pkg
Applications
• Final stage amplifiers for repeaters
• Optimized for driver amplifier
PA mobile infrastructure
The AP501 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 32.5 dB gain, while being able to
achieve high performance for PCS-band applications with
+36 dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -62 dBc
ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR
at 26.5 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
The AP501 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
The AP501 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
123
456
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Specifications
25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture
Parameter
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Power Gain
dB
IS-95A ACPR @ 27dBm (1)
dBc
wCDMA ACLR @ 26.5dBm (2) dBc
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
dBm
Output IP3
dBm
Operating Current @ 27 dBm
mA
Quiescent Current, Icq
mA
Device Voltage, Vcc
V
Device Voltage, Vpd (3)
V
Load Stability
VSWR
Min Typ Max
1930 – 1990
1960
30 32.4 30.5
-61.8 -55
-55
22
6
+36
+52
790 840 940
780 820 920
+12
+5
10:1
1. IS-95A signal modulation, 9 channels forward, 1.23 MHz BW, ±885 kHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Typical Performance (4)
Parameter
Units
Operating Current @ 27 dBm
mA
Quiescent Current, Icq
mA
Device Voltage, Vcc
V
R7 value
Ω
Test Frequency
MHz
Power Gain
dB
IS-95A ACPR @ 27dBm (1)
dBc
wCDMA ACLR @ 26.5dBm (2) dBc
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
dBm
Output IP3
dBm
Config1
840
820
+12
0
1960
32.4
-61.8
-55
22
6
+36
+52
Config2
420
250
+12
730
1960
30.5
-53
-49
20
8
+36
+52
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50 Ω
Rating
-40 to +85 °C
-55 to +150 °C
+15 dBm
Ordering Information
Part No.
AP501
AP501-PCB
Description
PCS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
Page 1 of 5 February 2006
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