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BTS425L1 查看數據表(PDF) - Siemens AG

零件编号
产品描述 (功能)
比赛名单
BTS425L1
Siemens
Siemens AG Siemens
BTS425L1 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
Tj = Tjt (see timing diagrams, page 9)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 9)
Reverse battery voltage drop (Vout > Vbb)
IL = -2 A
Tj=150 °C:
IL(SCp)
IL(SCr)
Tjt
Tjt
-Vbb
-VON(rev)
BTS 425 L1
Values
Unit
min typ max
27 37
20 30
12 18
-- 17
150
--
-- 10
--
--
-- 610
47 A
40
25
-- A
-- °C
-- K
32 V
-- mV
Diagnostic Characteristics
Open load detection current
(on-condition, )
Tj=-40 °C:
Tj=25..150°C:
Open load detection voltage10) (off-condition)
Tj=-40..150°C:
Internal output pull down
(pin 5 to 1), VOUT=5 V, Tj=-40..150°C
IL (OL)
VOUT(OL)
RO
150 600 950 mA
150 450 750
2
3
4V
4 10 30 k
9) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
10) External pull up resistor required for open load detection in off state.
Semiconductor Group
4

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