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ILD615 查看數據表(PDF) - Vishay Semiconductors

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ILD615 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
VR
IF
IFSM
Pdiss
Value
6.0
60
1.5
100
1.33
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector current
Power dissipation
Derate linearly from 25 °C
Test condition
t < 1.0 ms
Symbol
BVCEO
BVECO
IC
IC
Pdiss
Value
70
7.0
50
100
150
2.0
Unit
V
V
mA
mA
mW
mW/°C
Coupler
Parameter
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
Package power dissipation,
ILD615
Derate linearly from 25 °C
Package power dissipation,
ILQ615
Derate linearly from 25 °C
Isolation test voltage
Creepage
Clearance
Isolation resistance
Test condition
2.0 mm distance from case
bottom
t = 1.0 sec.
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Symbol
Tstg
Tamb
Tj
Tsld
VISO
RIO
RIO
Value
- 55 to + 150
- 55 to + 100
100
260
400
5.33
500
6.67
5300
7.0
7.0
1012
1011
Unit
°C
°C
°C
°C
mW
mW/°C
mW
mW/°C
VRMS
mm
mm
Document Number 83652
Rev. 1.4, 15-Dec-04
www.vishay.com
3

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