ILD615 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

比赛名单

ILD615

Optocoupler, Phototransistor Output (Dual, Quad Channel)

Vishay Semiconductors 

ILD615/ ILQ615

Vishay Semiconductors

VISHAY

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Forward voltage

Breakdown voltage

Reverse current

Capacitance

Thermal resistance, junction to

lead

Test condition

IF = 10 mA

IR = 10 µA

VR = 6.0 V

VR = 0 V, f = 1.0 MHz

Symbol

Min

Typ.

Max

Unit

VF

1.0

1.15

1.3

V

VBR

6.0

30

V

IR

0.01

10

µA

CO

25

pF

RTHJL

750

K/W

Output

Parameter

Test condition

Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz

Collector-emitter leakage

current, -1, -2

VCE = 10 V

Collector-emitter leakage

current, -3, -4

VCE = 10 V

Collector-emitter breakdown

voltage

ICE = 0.5 mA

Emitter-collector breakdown

voltage

IE = 0.1 mA

Thermal resistance, junction to

lead

Package transfer characteristics

Channel/Channel CTR match IF = 10 mA, VCE = 5.0 V

Symbol

Min

Typ.

Max

Unit

CCE

6.8

pF

ICEO

2.0

50

nA

ICEO

5.0

100

nA

BVCEO

70

V

BVECO

7.0

V

RTHJL

500

K/W

CTRX/

CTRY

1 to 1

2 to 1

Coupler

Parameter

Capacitance (input-output)

Insulation resistance

Channel to channel isolation

Test condition

VIO = 0 V, f = 1.0 MHz

VIO = 500 V, TA = 25 °C

Symbol

Min

Typ.

Max

Unit

CIO

0.8

pF

RS

1012

1014

Ω

500

VAC

Current Transfer Ratio

Parameter

Current Transfer Ratio

(collector-emitter saturated)

Test condition

IF = 10 mA, VCE = 0.4 V

Part

Symbol

Min

Typ.

Max

Unit

ILD615-1

CTRCEsat

25

%

ILQ615-1

ILD615-2

CTRCEsat

40

%

ILQ615-2

ILD615-3

CTRCEsat

60

%

ILQ615-3

ILD615-4

CTRCEsat

100

%

ILQ615-4

www.vishay.com

4

Document Number 83652

Rev. 1.4, 15-Dec-04

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