IRFP460NPBF 查看數據表（PDF） - International Rectifier
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IRFP460NPBF Datasheet PDF : 8 Pages
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IRFP460NPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
500
–––
–––
3.0
–––
–––
–––
–––
–––
0.58
–––
–––
–––
–––
–––
–––
–––
–––
0.24
5.0
25
250
100
-100
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID = 12A
V VDS = VGS, ID = 250µA
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
nA VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
10 ––– –––
––– ––– 124
––– ––– 40
––– ––– 57
––– 23 –––
––– 87 –––
––– 34 –––
––– 33 –––
––– 3540 –––
––– 350 –––
––– 30 –––
––– 3930 –––
––– 95 –––
––– 200 –––
S VDS = 50V, ID = 12A
ID = 20A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
VDD = 250V
ns ID = 20A
RG = 4.3Ω
RD = 13Ω,See Fig. 10
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
–––
340
mJ
–––
20
A
–––
28
mJ
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.45
0.24
–––
°C/W
–––
40
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
MOSFET symbol
D
––– ––– 20
A showing the
integral reverse
G
––– ––– 80
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V
––– 550 825 ns TJ = 25°C, IF = 20A
––– 7.2 10.8 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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