IRFP460NPBF 查看數據表（PDF） - International Rectifier
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IRFP460NPBF Datasheet PDF : 8 Pages
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IRFP460NPbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 20A
16
VDS = 400V
VDS = 250V
VDS = 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 20 40 60 80 100 120 140
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
10
100
10msec
1000
VDS , Drain-toSource Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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