LP62E16256E-T(2002) 查看數據表（PDF） - AMIC Technology

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LP62E16256E-T
(Rev.:2002)

256K X 16 BIT LOW VOLTAGE CMOS SRAM

AMIC Technology 

LP62E16256E-T Series

Absolute Maximum Ratings*

*Comments

VCC to GND ..............................................-0.5V to +3.0V

IN, IN/OUT Volt to GND ................... -0.5V to VCC + 0.5V

Operating Temperature, Topr ...................-25°C to +85°C

Storage Temperature, Tstg.....................-55°C to +125°C

Power Dissipation, PT ...................................................................... 0.7W

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of this

device at these or any other conditions above those

indicated in the operational sections of this specification

is not implied or intended. Exposure to the absolute

maximum rating conditions for extended periods may

affect device reliability.

DC Electrical Characteristics (TA = -25°C to + 85°C, VCC = 1.65V to 2.2V, GND = 0V)

Symbol

Parameter

ILI

Input Leakage Current

LP62E16256E-70LLT

Min.

Max.

-

1

Unit

Conditions

µA VIN = GND to VCC

ILO

Output Leakage Current

Active Power Supply Current

ICC

CE = VIH

-

1

µA HB = VIH or OE = VIH or

WE = VIH

VI/O = GND to VCC

-

5

mA CE = VIL, II/O = 0mA

ICC1

Dynamic Operating

Current

ICC2

ISB

Standby Current

ISB1

VOL

Output Low Voltage

VOH

Output High Voltage

-

30

mA * Min. Cycle, Duty = 100%

CE = VI, II/O = 0mA

-

10

mA

CE = VIL, VIH = VCC,

VIL = 0V, f = 1MHz,

II/O = 0 mA

-

0.5

mA CE = VIH

-

10

µA CE ≥ VCC - 0.2V,

VIN ≥ 0V

-

0.2

V

IOL = 0.1 mA

1.4

-

V

IOH = -0.1 mA

PRELIMINARY (July, 2002, Version 0.0)

4

AMIC Technology, Inc.

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