RMDA20420 查看數據表（PDF） - Fairchild Semiconductor

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RMDA20420

20–42 GHz Broadband Driver Amplifier

Fairchild Semiconductor 

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal

conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with

gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen

environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of

bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of

wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges

through the device.

Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for

appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap

between the chip and the substrate material.

©2004 Fairchild Semiconductor Corporation

RMDA20420 Rev. D

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