RMWP26001 查看數據表（PDF） - Fairchild Semiconductor

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RMWP26001

24–26.5 GHz Power Amplifier MMIC

Fairchild Semiconductor 

Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Currrent Idq = 370mA

Parameter

Frequency Range

Gate Supply Voltage (Vg)1

Gain Small Signal at Pin = -8dBm

Gain Variation vs. Frequency

Gain at 1dB Compression

Power Output at 1dB Compression

Power Output Saturated: Pin = +2dBm

Drain Current at Pin = -8dBm

Drain Current at 1dB Compression

Drain Current at Saturated: Pin = +2dBm

Power Added Efficiency (PAE): at P1dB

Input Return Loss (Pin = -8dBm)

Output Return Loss (Pin = -8dBm)

OIP3

Note:

1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 370mA.

Min

Typ

Max

24

26.5

-0.3

20

23

1

22

24

22

25

370

400

380

16

12

12

33

Units

GHz

V

dB

dB

dB

dBm

dBm

mA

mA

mA

%

dB

dB

dBm

©2004 Fairchild Semiconductor Corporation

RMWP26001 Rev. C

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