GS88237BB-250V 查看數據表（PDF） - Giga Semiconductor

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GS88237BB-250V

256K x 36 9Mb SCD/DCD Sync Burst SRAM

Giga Semiconductor 

GS88237BB/D-xxxV

AC Electrical Characteristics

Parameter

Symbol

-250

Min

Max

-200

Unit

Min

Max

Clock Cycle Time

tKC

4.0

—

5.0

—

ns

Clock to Output Valid

tKQ

—

2.5

—

2.5

ns

Clock to Output Invalid

tKQX

1.0

—

1.0

—

ns

Pipeline

Clock to Output in Low-Z

Setup time

tLZ1

1.0

—

1.0

—

ns

tS

1.2

—

1.4

—

ns

Hold time

tH

0.2

—

0.4

—

ns

G to Output Valid

tOE

—

2.3

—

2.5

ns

G to output in High-Z

tOHZ1

—

2.3

—

2.5

ns

Clock HIGH Time

tKH

1.3

—

1.3

—

ns

Clock LOW Time

tKL

1.7

—

1.7

—

ns

Clock to Output in

High-Z

tHZ1

1.0

2.3

1.0

2.5

ns

G to output in Low-Z

tOLZ1

0

—

0

—

ns

ZZ setup time

tZZS2

5

—

5

—

ns

ZZ hold time

tZZH2

1

—

1

—

ns

ZZ recovery

tZZR

20

—

20

—

ns

Notes:

1. These parameters are sampled and are not 100% tested.

2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

Rev: 1.04 6/2006

15/28

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

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