GS882Z18BGD-150IV 查看數據表（PDF） - Giga Semiconductor
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GS882Z18BGD-150IV Datasheet PDF : 33 Pages
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GS882Z18/36B(B/D)-xxxV
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is Low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables
below for details.
FLXDrive™
The ZQ pin allows selection between NBT RAM nominal drive strength (ZQ low) for multi-drop bus applications and low drive
strength (ZQ floating or high) point-to-point applications. See the Output Driver Characteristics chart for details.
Mode Pin Functions
Mode Name
Pin Name State
Function
Burst Order Control
L
LBO
H
Linear Burst
Interleaved Burst
Output Register Control
L
FT
H or NC
Flow Through
Pipeline
Power Down Control
L or NC
ZZ
H
Active
Standby, IDD = ISB
Single/Dual Cycle Deselect Control
L
SCD
H or NC
Dual Cycle Deselect
Single Cycle Deselect
FLXDrive Output Impedance Control
L
ZQ
H or NC
High Drive (Low Impedance)
Low Drive (High Impedance)
Note:
There is a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the
above table.
There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in
the default states as specified in the above table.
There are pull-up devices on the ZQ and SCD pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip
will operate in the default states as specified in the above tables.
Rev: 1.04 6/2006
12/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
© 2004, GSI Technology
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