GS882Z18BGD-150IV 查看數據表（PDF） - Giga Semiconductor

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GS882Z18BGD-150IV

9Mb Pipelined and Flow Through Synchronous NBT SRAM

Giga Semiconductor 

Flow Through Mode Timing (NBT)

GS882Z18/36B(B/D)-xxxV

CK

CKE

E*

ADV

W

Bn

A0–An

DQ

G

Write A

Write B

Write B+1 Read C

tKL

tKH

tKC

Cont

Read D

Write E

Read F

Write G

tH

tS

tH

tS

tH

tS

tH

tS

tH

tS

tH

tS

A

B

tH

tS

D(A)

D(B)

C

tKQ

tLZ

D(B+1)

Q(C)

D

E

F

G

tKQX tKQ

tHZ

tLZ

tKQX

Q(D)

D(E)

Q(F)

D(G)

tOLZ

tOE

tOHZ

*Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1

Rev: 1.04 6/2006

20/33

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.

© 2004, GSI Technology

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