LIS2L02AS 查看數據表（PDF） - STMicroelectronics
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LIS2L02AS Datasheet PDF : 6 Pages
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LIS2L02AS
ELECTRICAL CHARACTERISTCS (Temperature range -40°C to +85°C)
Symbol
Parameter
Test Condition
Min.
Vdd Supply voltage
3
Idd Supply current
Voff Zero-g level
Tamb = 25°C
ratiometric to Vdd
Vdd/2-10%
Ar Acceleration range
So Sensitivity ratiometric to
Vdd
0V on FS pin
Vdd on FS pin
Tamb = 25°C
Full-scale = 2g
±1.8
Vdd/5–10%
Tamb = 25°C
Full-scale = 6g
Vdd/15–10%
NL Non Linearity
Best fit straight line
X, Y axis
Full-scale = 2g
fuc Sensing Element Resonant X, Y axis
Frequency
an Acceleration noise density Vdd = 5V
Full-scale = 2g
Vt Self test output voltage
Tamb = 25°C
100
Ratiometric to Vdd
@ 5V
Vst Self test input
Logic 0 level
0
Logic 1 level
2.8
Rout Output impedance
Cload Capacitive load drive
320
Typ.
1.0
Vdd/2
±2.0
±±6.0
Vdd/5
Vdd/15
±0.3
4.0
50
100
Max.
5.25
Vdd/2+10%
Unit
V
mA
V
±2.2
g
g
Vdd/5+10% V/g
Vdd/15+10% V/g
%
KHz
µg/ Hz
mV
0.8
V
Vdd
V
kΩ
pF
1 FUNCTIONALITY
1.1 Sensing element
The THELMA process is utilized to create a surface micro-machined accelerometer. The technology allows to
carry out suspended silicon structures which are attached to the substrate in a few points called anchors and
free to move on a plane parallel to the substrate itself. To be compatible with the traditional packaging tech-
niques a cap is placed on top of the sensing element to avoid blocking the moving parts during the molding
phase.
The equivalent circuit for the sensing element is shown in the below figure; when a linear acceleration is applied,
the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This im-
balance is measured using charge integration in response to a voltage pulse applied to the sense capacitor.
The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the maximum
variation of the capacitive load is few tenth of pF.
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