L8050HPLT1(V1_1) 查看數據表（PDF） - Leshan Radio Company,Ltd

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L8050HPLT1
(Rev.:V1_1)

General Purpose Transistors NPN Silicon

Leshan Radio Company,Ltd 

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

FEATURE

ƽHigh current capacity in compact package.

IC =1.5A.

ƽEpitaxial planar type.

ƽPNP complement: L8550H

ƽPb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L8050HPLT1

1HA

3000/Tape&Reel

L8050HPLT1G

1HA

(Pb-Free)

3000/Tape&Reel

L8050HQLT1

1HC

3000/Tape&Reel

L8050HQLT1G

1HC

(Pb-Free)

3000/Tape&Reel

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-continuoun

Symbol

VCEO

VCBO

VEBO

IC

Max

25

40

5

1500

Unit

V

V

V

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR-5 Board,(1)

TA=25°C

Derate above 25°C

Thermal Resistance,Junction to Ambient

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

Symbol

PD

R θJ A

PD

Max

Unit

225

mW

1.8

mW/°C

556

°C/W

300

mW

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

R θJ A

Tj,T Stg

417

-55 to +150

°C/W

°C

L8050H*LT1

3

1

2

SOT–23

COLLECTOR

3

1

BASE

2

EMITTER

Version 1.1

L8050H*LT1-1/3

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