L8050HPLT1(V1_1) 查看數據表（PDF） - Leshan Radio Company,Ltd

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L8050HPLT1
(Rev.:V1_1)

General Purpose Transistors NPN Silicon

Leshan Radio Company,Ltd 

LESHAN RADIO COMPANY, LTD.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

25

–

(IC=1.0mA)

Emitter-Base Breakdown Voltage

(IE=100µΑ)

V(BR)EBO

5

–

Collector-Base Breakdown Voltage

(IC=100µΑ)

V(BR)CBO

40

–

Collector Cutoff Current (VCB=35V)

ICBO

–

–

Emitter Cutoff Current (VEB=4V)

IEBO

–

–

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

ON CHARACTERISTICS

DC Current Gain

IC=100mA,VCE=1V

hFE

120

-

Collector-Emitter Saturation Voltage

(IC=800mA IB=80mA)

VCE(S)

-

-

L8050H*LT1

Max

Unit

–

V

–

V

–

V

150

nA

150

nA

Max

Unit

600

0.5

V

NOTE :

*

P

hF E

120~200

Q

R

150~300 200~400

S

300~600

Version 1.1

L8050H*LT1-2/3

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