STF18N60M2(2014) 查看數據表（PDF） - STMicroelectronics

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STF18N60M2
(Rev.:2014)

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package

STMicroelectronics 

STF18N60M2

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25 °C

ID Drain current (continuous) at TC = 100 °C

(2)

IDM Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

(3)

dv/dt Peak diode recovery voltage slope

(4)

dv/dt MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s,TC = 25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited by maximum junction temperature

2. Pulse width limited by safe operating area

3. ISD ≤ 13 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V.

4. VDS ≤ 480 V

± 25

(1)

13

(1)

8

(1)

52

25

15

50

2500

- 55 to 150

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Value

5

62.5

Symbol

Table 4. Avalanche characteristics

Parameter

Value

Avalanche current, repetetive or not

IAR repetetive (pulse width limited by Tjmax )

3

Single pulse avalanche energy (starting

EAS Tj=25°C, ID= IAR; VDD=50)

135

Unit

V

A

A

A

W

V/ns

V/ns

V

°C

Unit

°C/W

°C/W

Unit

A

mJ

DocID024729 Rev 3

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