STF18N60M2(2014) 查看數據表（PDF） - STMicroelectronics

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STF18N60M2
(Rev.:2014)

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package

STMicroelectronics 

STF18N60M2

Electrical characteristics

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

(1)

ISDM Source-drain current (pulsed)

-

(2)

VSD Forward on voltage

ISD = 13 A, VGS = 0

-

13 A

52 A

1.6 V

trr Reverse recovery time

- 305

ns

ISD = 13 A, di/dt = 100 A/μs

Qrr Reverse recovery charge

VDD = 60 V (see Figure 16)

-

3.3

μC

IRRM Reverse recovery current

- 22

A

trr Reverse recovery time

- 417

ISD = 13 A, di/dt = 100 A/μs

ns

Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C

- 4.6

μC

IRRM Reverse recovery current

(see Figure 16)

- 22

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

DocID024729 Rev 3

5/13

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