STL18N60M2(2014) 查看數據表（PDF） - STMicroelectronics

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STL18N60M2
(Rev.:2014)

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

STL18N60M2

Electrical characteristics

Symbol

Table 6. Switching times

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-on delay time

Fall time

VDD = 300 V, ID = 6.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19)

Min. Typ. Max Unit

- 12 - ns

-

9

- ns

- 47 - ns

- 10.6 - ns

Symbol

Table 7. Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

(1)

ISDM Source-drain current (pulsed)

-

(2)

VSD Forward on voltage

VGS = 0, ISD = 13 A

-

9A

36 A

1.6 V

trr Reverse recovery time

- 305

ISD = 13 A, di/dt = 100 A/μs

ns

Qrr

IRRM

Reverse recovery charge

Reverse recovery current

VDD = 60 V

(see Figure 16)

- 3.3

μC

- 22

A

trr Reverse recovery time

VDD = 60 V

- 417

ns

Qrr Reverse recovery charge di/dt = 100 A/μs, ISD = 13 A - 4.6

μC

IRRM Reverse recovery current

Tj=150 °C (see Figure 16)

- 22.2

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

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