STL18N60M2(2014) 查看數據表（PDF） - STMicroelectronics

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STL18N60M2
(Rev.:2014)

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

STL18N60M2

Electrical characteristics

Figure 8. Capacitance variations

C

(pF)

AM15841v1

1000

Ciss

Figure 9. Output capacitance stored energy

Eoss(µJ)

AM15843v1

6

5

100

10

1

0.1

1

Coss

Crss

10

100 VDS(V)

4

3

2

1

0

0 100 200 300 400 500 600 VDS(V)

Figure 10. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

ID = 250 µA

AM15915v1

1.10

1.00

0.90

0.80

0.70

-50 -25 0 25 50 75 100 TJ(°C)

Figure 11. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.3

2.1

1.9

ID= 8.8 A

AM15916v1

1.7

1.5

1.3

1.1

0.9

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Figure 12. Normalized V(BR)DSS vs temperature

V(BR)DSS

(norm)

1.11

ID=1mA

AM15917v1

1.09

1.07

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0 25 50 75 100 TJ(°C)

Figure 13. Source-drain diode forward

characteristics

VSD (V)

AM15842v1

1.4

1.2

TJ=-50°C

1

0.8

0.6

TJ=25°C

TJ=150°C

0.4

0.2

0

0 2 4 6 8 10 12 ISD(A)

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