STL7N80K5(2013) 查看數據表（PDF） - STMicroelectronics

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STL7N80K5
(Rev.:2013)

N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH™ 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

STMicroelectronics 

STL7N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS

ID (1)

ID (1)

IDM (1),(2)

PTOT(1)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

± 30

3.6

2.3

14

42

IAR(3)

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

2

EAS(4)

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

88

dv/dt (5) Peak diode recovery voltage slope

4.5

dv/dt (6) MOSFET dv/dt ruggedness

50

Tstg Storage temperature

Tj Max. operating junction temperature

1. The value is rated according to Rthj-case and limited by package.

2. Pulse width limited by safe operating area.

3. Pulse width limited by Tjmax

4. Starting Tj=25 °C, ID=IAR, VDD=50 V

5. ISD ≤ 3.6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS

6. VDS ≤ 640 V

- 55 to 150

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb(1) Thermal resistance junction-amb max

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Value

3

59

Unit

V

A

A

A

W

A

mJ

V/ns

V/ns

°C

°C

Unit

°C/W

°C/W

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