STL7N80K5(2013) 查看數據表（PDF） - STMicroelectronics
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STL7N80K5
(Rev.:2013)
(Rev.:2013)
STMicroelectronics
STL7N80K5 Datasheet PDF : 17 Pages
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Zero gate voltage
VDS = 800 V
drain current (VGS = 0) VDS = 800 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 3 A
STL7N80K5
Min. Typ. Max. Unit
800
V
1 µA
50 µA
± 10 µA
3
4
5
V
0.95 1.2 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
360
- pF
-
30
- pF
-
1
- pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 640 V, VGS = 0
-
47
- pF
-
20
- pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID=0
-
6
-
Ω
Qg
Total gate charge
VDD = 640 V, ID = 6 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
-
13.4
- nC
-
3.7
- nC
-
7.5
- nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging
time as Coss when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored
energy as Coss when VDS increases from 0 to 80% VDSS
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DocID025551 Rev 1
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