SSM60T03GH 查看數據表（PDF） - Silicon Standard Corp.
零件编号
产品描述 (功能)
比赛名单
SSM60T03GH Datasheet PDF : 5 Pages
| |||
SSM60T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
12mΩ
45A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
G DS
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The SSM60T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM60T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM60T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating
of 175°C for improved thermal margin and reliability.
Symbol
VDS
VGS
ID
IDM
PD
EAS
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Value
30
±20
45
32
120
44
0.352
29
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Value
3.4
110
Units
°C/W
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
3.VDD=25V , L=100uH , RG=25Ω , IAS=24A.
10/16/2005 Rev.3.1
www.SiliconStandard.com
1 of 5
Share Link: 