SSM60T03GH 查看數據表（PDF） - Silicon Standard Corp.

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SSM60T03GH

N-channel Enhancement-mode Power MOSFET

Silicon Standard Corp. 

12

I D =20A

9

V DS =10V

V DS =15V

V DS =20V

6

3

0

0

6

12

18

24

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

1000

100

100us

10

1ms

T C =25 o C

Single Pulse

10ms

100ms

DC

1

0.1

1

10

100

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

VDS

90%

10%

VGS

td(on) tr

td(off) tf

SSM60T03GH,J

f=1.0MHz

10000

1000

C iss

C oss

C rss

100

1

8

15

22

29

V DS , Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance Characteristics

1

Duty factor = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

Single Pulse

PDM

t

T

Duty Factor = t/T

Peak Tj = PDM x Rthjc + TC

0.01

0.00001

0.0001

0.001

0.01

0.1

1

t , Pulse Width (s)

Fig10. Effective Transient Thermal Impedanc

VG

4.5V

QGS

QG

QGD

Charge

Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

10/16/2005 Rev.3.1

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