MD3221N 查看數據表（PDF） - Unspecified

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MD3221N

DC-DC Converter Power IC

Unspecified 

The substrate wiring between the input condenser

to VDD and P.GND2 is subject to the greatest

variation in current, and wiring design should

therefore focus primarily on reducing its impedance

to the absolute minimum. Refer to '16. Cautions

for Pattern Design' for details.

◆Selecting the Regenerative Diode (D2)

The MD3221N employs synchronous rectification

using a regenerative MOSFET, and requires a

diode to bypass the regenerative current during

the dead-time interval. If this diode is not present

regenerative current flows in the MOSFET body

diode during the dead-time interval, resulting in

increased losses and noise. A Schottky barrier

diode with low VF is ideal for use in preventing

current flowing in the body diode, however it is

important that this diode has a low leakage current

to prevent thermal runaway.

Recommended component :

D1FM3 (Shindengen)

30V, 3A VF =0.4V（max） IR=0.1mA（max）

M1FM3 (Shindengen)

30V, 2.1A VF =0.4V（max） IR=0.05mA（max）

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