STF7NM60N(2018) 查看數據表（PDF） - STMicroelectronics

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STF7NM60N
(Rev.:2018)

N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and IPAK packages

STMicroelectronics 

STD7NM60N, STF7NM60N, STU7NM60N

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

5

-

A

20

VSD (2)

Forward on voltage

ISD = 5 A, VGS = 0 V

-

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs

Qrr

IRRM

Reverse recovery charge VDD = 60 V (see Figure 15. Test circuit for

-

inductive load switching and diode recovery

Reverse recovery current times)

1.3

V

213

ns

1.5

μC

14

A

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs

265

ns

Qrr

Reverse recovery charge VDD = 60 V, Tj = 150 °C(see Figure 15. Test

-

1.8

μC

circuit for inductive load switching and

IRRM

Reverse recovery current diode recovery times)

14

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

DS6523 - Rev 5

page 4/26

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