ADG528A 查看數據表（PDF） - Analog Devices

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ADG528A

CMOS Latched 4-/8-Channel Analog Multiplexers

Analog Devices 

ADG528A/ADG529A

Parameter

ADG528A

ADG529A

K Version

–40°C to

+25°C +85°C

POWER SUPPLY

IDD

ISS

Power Dissipation

0.6

1.5

20

0.2

10

2.8

NOTE

1Sample tested at +25°C to ensure compliance.

Specifications subject to change without notice.

ADG528A

ADG529A

B Version

–40°C to

+25°C +85°C

ADG528A

ADG529A

T Version

–55°C to

+25°C +125°C

0.6

1.5

20

0.2

10

2.8

0.6

1.5

20

0.2

10

2.8

Units Comments

mA typ VIN = VINL or VINH

mA max

µA typ VIN = VINL or VINH

mA max

mW typ

mW max

SINGLE SUPPLY (VDD = +10.8 V to +16.5 V, VSS = GND = 0 V, unless otherwise noted.)

Parameter

ADG528A

ADG529A

K Version

–40°C to

+25°C +85°C

ADG528A

ADG529A

B Version

–40°C to

+25°C +85°C

ADG528A

ADG529A

T Version

–55°C to

+25°C +125°C

Units

Comments

ANALOG SWITCH

Analog Signal Range

RON

RON Drift

RON Match

IS (OFF), Off Input

Leakage

ID (OFF), Off Input

Leakage

ADG528A

ADG529A

ID (ON), On Channel

Leakage

ADG528A

ADG529A

IDIFF, Differential Off

Output Leakage

(ADG529A only)

GND GND

VDD VDD

500

700 1000

0.6

5

0.02

1

50

0.04

1

100

1

50

0.04

1

100

1

50

25

GND GND

VDD VDD

500

700 1000

0.6

5

0.02

1

50

0.04

1

100

1

50

0.04

1

100

1

50

GND GND

VDD VDD

500

700 1000

0.6

5

0.02

1

50

0.04

1

100

1

50

0.04

1

100

1

50

25

25

V min

V max

Ω typ GND ≤ VS ≤ +10 V, IDS = 0.5 mA;

Test Circuit 1

Ω max

%/°C typ GND ≤ VS ≤ +10 V, IDS = 0.5 mA

% typ GND ≤ VS ≤ +10 V, IDS = 0.5 mA

nA typ V1 = +10 V/GND, V2 = GND/+10 V;

nA max Test Circuit 2

nA typ V1 = +10 V/GND, V2 = GND/+10 V;

nA max Test Circuit 3

nA max

nA typ V1 = +10 V/GND, V2 = GND/+10 V;

nA max Test Circuit 4

nA max

nA max V1 = +10 V/GND, V2 = GND/+10 V;

Test Circuit 5

DIGITAL CONTROL

VINH, Input High Voltage

2.4

VINL, Input Low Voltage

0.8

IINL or IINH

1

CIN Digital Input

Capacitance

8

DYNAMIC CHARACTERISTICS1

tTRANSITION

300

tOPEN

tON (EN, WR)

tOFF (EN, RS)

tW Write Pulse Width

450 600

50

25 10

250

450 600

250

450 600

100 120

2.4

0.8

1

8

300

450 600

50

25 10

250

450 600

250

450 600

100 120

2.4

0.8

1

8

300

450 600

50

25 10

250

450 600

250

450 600

100 130

V min

V max

µA max VIN = 0 to VDD

pF max

ns typ

ns max

ns typ

ns min

ns typ

ns max

ns typ

ns max

ns min

V1 = +10 V/GND, V2 = GND/+10 V;

Test Circuit 6

Test Circuit 7

Test Circuits 8 and 9

Test Circuits 8 and 10

See Figure 1

REV. B

–3–

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